| Atributo del producto | Valor del atributo |
|---|---|
| Encapsulado | Low profile 107x45mm |
| Status | DESCATALOGADO |
| Tensión [V] | 1200 |
| Topología | 3 ~ Bridge + BC + Inverter |
| Amperios [A] | 12 |
| Familia de producto | XPT™ IGBTs |
• Easy paralleling due to the positive temperature coefficient of the on-state voltage
• Rugged XPT design (Xtreme light Punch Through) results in:
- short circuit rated for 10 μsec.
- very low gate charge - square RBSOA @ 3x Ic
- low EMI
• Thin wafer technology combined with the XPT design results in a competitive low Vce(sat)
• SONIC™ diode- fast and soft reverse recovery- low operating forward voltage
• Rugged XPT design (Xtreme light Punch Through) results in:
- short circuit rated for 10 μsec.
- very low gate charge - square RBSOA @ 3x Ic
- low EMI
• Thin wafer technology combined with the XPT design results in a competitive low Vce(sat)
• SONIC™ diode- fast and soft reverse recovery- low operating forward voltage
| Atributo del producto | Valor del atributo |
|---|---|
| País de origen | Alemania |
| Reconocido CSA | SÍ |
| Conformidad RoHS | SÍ |
| Reconocido UL | SÍ |
| Partida arancelaria | 85412900 |
