| Product attribute | Attribute value |
|---|---|
| Encapsulat | Low profile 107x45mm |
| Estatus | DESCATALOGAT |
| Tensió [V] | 1200 |
| Topologia | 3 ~ Bridge + BC + Inverter |
| Ampers [A] | 12 |
| Família de producte | XPT™ IGBTs |
• Easy paralleling due to the positive temperature coefficient of the on-state voltage
• Rugged XPT design (Xtreme light Punch Through) results in:
- short circuit rated for 10 μsec.
- very low gate charge - square RBSOA @ 3x Ic
- low EMI
• Thin wafer technology combined with the XPT design results in a competitive low Vce(sat)
• SONIC™ diode- fast and soft reverse recovery- low operating forward voltage
• Rugged XPT design (Xtreme light Punch Through) results in:
- short circuit rated for 10 μsec.
- very low gate charge - square RBSOA @ 3x Ic
- low EMI
• Thin wafer technology combined with the XPT design results in a competitive low Vce(sat)
• SONIC™ diode- fast and soft reverse recovery- low operating forward voltage
| Product attribute | Attribute value |
|---|---|
| País d'origen | Alemanya |
| Reconegut CSA | SÍ |
| Conformitat RoHS | SÍ |
| Reconegut UL | SÍ |
| Partida aranzelària | 85412900 |
