| Atributo del producto | Valor del atributo |
|---|---|
| Encapsulado | Módulo aislado 62mm |
| Status | DESCATALOGADO |
| Tensión [V] | 200 |
| Amperios [A] | 580 |
| Topología | Half-bridge |
- HiPerFETTM technology
- low RDSon
- dv/dt ruggedness
- fast intrinsic reverse diode
- low inductive current path
- screw connection to high current main terminals
- use of non interchangeable connectors for auxiliary terminals possible
- Kelvin source terminals for easy drive
- isolated ceramic base plate
| Atributo del producto | Valor del atributo |
|---|---|
| País de origen | Korea |
| Reconocido CSA | NO |
| Conformidad RoHS | SÍ |
| Reconocido UL | UL 94V-0 |
| Partida arancelaria | 85044090 |
